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| 2N6660X MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. * Switching Regulators * Converters * Motor Drivers 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO-39 METAL PACKAGE Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain CASE - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS VGS ID ID IDM PD PD Tj Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) @ TCASE = 25C @ TCASE = 100C @ TCASE = 25C @ TCASE = 100C 60V 40V 1.1A 0.8A 3A 6.25W 2.5W -55 to 150C -55 to 150C 300C Operating Junction Temperature Range Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC: 7083 iss 1 2N6660X ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter STATIC CHARACTERISTICS BVDSS VGS(th) IGSS Drain - Source Breakdown Voltage Gate Threshold Voltage Gate - Body Leakage Current VGS = 0V VDS = VGS VGS = 15V VDS = 0V TCASE = 125C VDS = Max. Ratings VGS = 0V IDSS ID(on)* Zero Gate Voltage Drain Current On-State Drain Current VDS =0.8VMax.Ratings VGS = 0V VGS = 5V RDS(on)* Drain - Source On Resistance VGS = 10V ID = 1A VGS = 5V VDS(on)* gFS* Ciss Coss Crss tON tOFF IS ISM VSD Drain - Source On Voltage DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage 1 VDD = 25V RL = 23 ID = 1A RG = 25 , Test Conditions ID = 10A ID = 1mA Min. 60 0.8 Typ. 100 1.5 1 5 1 50 Max. Unit V nA 2.2 100 500 10 500 A A TCASE = 125C 1.5 ID = 0.3A TCASE = 125C ID = 0.3A ID = 1A ID = 0.5A VDS = 25V 170 VDS = 2VDS(ON) VGS = 10V 1.7 4.7 2.7 3.9 1.4 2.7 195 35 33 2 8 8 50 40 10 10 10 5 3 4.2 1.5 3 VGS = 10V VDS = 25V VGS = 0V f = 1MHz V mS pF ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER Symbol Showing The Integral PN Juncion Rectifier IS = -1.1A VGS = 0V / -1.1 5 A -3 -0.9 V TCASE = 125C 1 Pulse Test: Pulse width 300 s , Duty Cycle 2% Parameter RJA RJC Thermal Resistance, Junction to Ambient (Free Air Operation) Thermal Resistance, Junction to Case Min. Typ. Max. 170 20 Unit C/W C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC: 7083 iss 1 |
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